| PART |
Description |
Maker |
| 2N6666 |
PLASTIC MEDIUM-POWER SILICON TRANSISTORS
|
Boca Semiconductor Corporation
|
| BD676-D |
Plastic Medium-Power Silicon PNP Darlingtons
|
ON Semiconductor
|
| BD159-D |
Plastic Medium Power NPN Silicon Transistor
|
ON Semiconductor
|
| MJE344-D |
Plastic NPN Silicon Medium-Power Transistor
|
ON Semiconductor
|
| MJE350 |
Plastic Medium Power PNP Silicon Transistor
|
New Jersey Semi-Conduct...
|
| TIP110 |
PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS
|
New Jersey Semi-Conduct...
|
| TIP122 |
PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS
|
New Jersey Semi-Conduct...
|
| BD680AG |
Plastic Medium-Power Silicon PNP Darlingtons
|
ON Semiconductor
|
| 2N4920 |
MEDIUM-POWER PLASTIC PNP SILICON TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
| 2N4921 2N4922 2N4923 |
MEDIUM-POWER PLASTIC NPN SILICON TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
| MJE10B1 MJE1093 MJE2003 MJE1103 MJE1102 MJE2092 MJ |
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| CSB1370 CSB1370F CSB1370D CSB1370E |
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE.
PNP Silicon Epitaxial Power Transistor
|
CDIL[Continental Device India Limited]
|
